Modelling Defects at SiC/Insulator interfaces at UCL
Applications are invited for a 3.5 years PhD position in the group of Prof. Alexander Shluger at the Department of Physics and Astronomy, University College London in collaboration with Infineon Technology, Austria (IFAT) to model the effects of defects at SiC/insulator interfaces on the performance of power field-effect-transistors (FETs).
Research at UCL is focused on modelling defects in semiconductors and insulators and at interfaces. IFAT is concerned with the reliability of power FETs and similar devices based on semiconducting crystals. The quality and reliability of FETs based on silicon carbide (SiC) strongly depend on the defects present in SiC, in the insulator and at the metal-semiconductor interface. These defects are also considered as prospective candidates for quantum computation.
This PhD project will use computational modelling to predict ways of improving materials and deposition techniques for SiC growth processes to minimize defect influences and improve the performance of SiC-based devices. This will include using the existing and developing novel methods for modelling the structure and properties SiC/insulator/metal interfaces based on atomistic modelling and Density Functional Theory. Particular emphasis will be on comparing with the experimental data on electron paramagnetic resonance, high resolution transmission electron microscopy and electrical measurements at IFAT.
This studentship is funded by EPSRC and is open only to UK applicants and EU applicants resident in the UK for the last three years. The PhD training and research will be carried out within the M3S Engineering Doctorate Centre at UCL and the London Thomas Young Centre.
Evaluation of applications will commence immediately, and will continue until the position is filled. Applications and inquiries regarding the vacancy can be made to email@example.com (Tel: +44 (0)20 7679 1312)